This research studied the bistable properties of synthesized graphene oxide (GO) composited with polyvinylpyrrolidone (PVP). The devices were fabricated using a spin coating process on indium tin oxide (ITO)/glass substrate, and the top electrodes were prepared by thermal evaporation with the device structure of ITO/PVP:GO/Al. The PVP:GO films were characterized by Raman spectroscopy, Fourier-transform infrared spectroscopy, X-ray photoemission spectroscopy, and scanning electron microscopy. The current-voltage (I-V) characteristics of the fabricated device exhibited a maximum ON/OFF current ratio in the order of about 104 at a GO concentration of 4 wt%. The mechanism was explained by fitting with the results of the I-V measurement. Moreover, the retention test of the device was more than 2×104 s. The device showed the important characteristics of memory to be a candidate for data storage.
Keywords: graphene oxide; memory device; polymer; composite; nanomaterials
*Corresponding author: Tel.: (+66) 23298000 ext. 3128
E-mail: korakot.onlaor@gmail.com
Thiwawong, T. undefined. ., Songkeaw, P. undefined. ., Onlaor*, K. undefined. ., & Tunhoo, B. undefined. . (2021). Electrical Properties of Bistable Device Based on Graphene Oxide Composited with Polyvinylpyrrolidone Thin Films. CURRENT APPLIED SCIENCE AND TECHNOLOGY, 662-672.
