Al0.3 Ga0.7 As/GaAs Single Quantum Well Transition Energy Calculation

Abstract

The calculation results of e l –hh l transition energies of Al₀_.₃Ga₀_.₇As/GaAs single quantum well as various temperatures range from 15 K to 120 K have been improved in this work. Good agreement compared with luminescence data has been obtained when some parameters like effective masses of electron and hole, band offsets were changed.

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Corresponding author: E-mail : cast@kmitl.ac.th

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Techitdheera, W. ., Thanomngam, P. ., Pecharapa, W. ., & Nukaew, J. . (2018). Al0.3 Ga0.7 As/GaAs Single Quantum Well Transition Energy Calculation. CURRENT APPLIED SCIENCE AND TECHNOLOGY, 445-449.

References

Wisanu Pecharapa, Pongladda Panyajirawut, and Prasert Kraisingdecha “Study of Al0.3 Ga0.7 As/GaAs Single Quantum Well Grown by Molecular Beam Epitaxy,” private communication.
A. B. Dzyubenko, Intraband transitions in magnetoexitons in coupled double quantum wells, J. of Experimental and Theoretical Physics, 86(4), 1998, pp. 790-797.
Kyu-Seok Lee, Won-Seok Han, Jeong Soo Kim, Bun Lee, “Band structure Parameters of Compressively Strained In0.65 Ga0.35 As/InGaAsP Multiple Quantum Wells,” J. of Korean Physical Society, 37(5), 2000, pp. 587-592.
V. I. Zubkov et al, “Determination of band offsets in strained InxGa1-x As/GaAs Quantum Wells by Capacitance-Voltage Profiling and Schrodinger-Poisson Self-Consistent Simulation”, Phys. Review B, 70, 2004.
Jasprit Singh, Semiconductor Devices: An Introduction, McGraw-Hill, Singapore, 1994.

Author Information

Wicharn Techitdheera

Computational Physics Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Pitiporn Thanomngam

Computational Physics Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Wisanu Pecharapa

Quantum and Optical Semiconductor Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Jiti Nukaew

Quantum and Optical Semiconductor Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Al0.3 Ga0.7 As/GaAs Single Quantum Well Transition Energy Calculation

Abstract

How to Cite

References

Author Information

Wicharn Techitdheera

Pitiporn Thanomngam

Wisanu Pecharapa

Jiti Nukaew

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