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A New Type of Dilute Magnetic Semiconductor: Saturation Magnetization Dependence on Level of Nonmagnetic Ion Doping

A New Type of Dilute Magnetic Semiconductor: Saturation Magnetization Dependence on Level of Nonmagnetic Ion Doping

Jul 9, 2018Vol. 18 No. 2 (2018)

Abstract

By definition, a dilute magnetic semiconductor is a II-IV or III-V semiconductor in which some of the nonmagnetic ions are replaced by magnetic ions. Defects due to Zn vacancies in ZnO nano particles (NP’s) can induce virtual magnetic moments in this semiconduct or making it a room temperature ferro magnet. The systematic changes in the magnetic behaviors of ZnO NP’s doped with non magnetic Al, Ag, Mg and Sb ions are observed. The changes are usually explained in terms of the increased stability of the zinc vacancies when the vacancies are a part of new impurity complexes formed when the impurity ions substitute for the zinc ions. In most cases, this explains the increases in the saturation magnetizations as more nonmagnetic impurities are substituted into the ZnO NP’s.

Keywords: ZnO nanoparticles, Zn vacancies, Virtual magnetic moments, Hysteresis Loops, DFT calculations.

 *Corresponding author: E-mail: fscimt@ku.ac.th

 

References

Author Information

I-Ming Tang

Department of Physics, Faculty of Science, KasetsartUniversity, Bangkok, Thailand

I-Ming Tang

Department of Physics, Faculty of Science, KasetsartUniversity, Bangkok, Thailand

I-Ming Tang

Computational & Applied Science for Innovation Clusters (CLASSIC) Faculty of Science, King Mongkut’sUniversity of Technology, Thonburi, Thailand

About this Article

Journal

Vol. 18 No. 2 (2018)

Keywords

ZnO nanoparticles, Zn vacancies, Virtual magnetic moments, Hysteresis Loops, DFT calculations.

Published

9 July 2018

Current Journal

Journal Cover
Vol. 18 No. 2 (2018)

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